Photoluminescence of AlxGa1?xAs/GaAs quantum well heterostructures grown by molecular beam epitaxy
- 1 February 1984
- journal article
- research article
- Published by Springer Nature in Applied Physics A
- Vol. 33 (2), 97-105
- https://doi.org/10.1007/bf00617615
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Confined carrier quantum states in ultrathin semiconductor heterostructuresPublished by Springer Nature ,2007
- Photoluminescence of Al x Ga1?x As/GaAs quantum well heterostructures grown by molecular beam epitaxyApplied Physics A, 1984
- Bound excitons in p-doped GaAs quantum wellsSolid State Communications, 1982
- Extrinsic layer at AlxGa1−xAs-GaAs interfacesApplied Physics Letters, 1982
- Extrinsic photoluminescence from GaAs quantum wellsPhysical Review B, 1982
- Superlattice band structure in the envelope-function approximationPhysical Review B, 1981
- Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructuresJournal of Applied Physics, 1981
- Enhanced mobility in inverted AlxGa1−xAs/GaAs heterojunctions: binary on top of ternaryElectronics Letters, 1981
- Alloy Clustering in-GaAs Quantum-Well HeterostructuresPhysical Review Letters, 1980
- Crystal growth kinetics in (GaAs)n−(AlAs)m superlattices deposited by molecular beam epitaxyJournal of Crystal Growth, 1978