The calculation of carrier concentrations in silicon in the medium and high temperature regions
- 1 May 1973
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (5), 651-655
- https://doi.org/10.1016/0038-1101(73)90170-6
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Effective mass and intrinsic concentration in siliconSolid-State Electronics, 1967
- Cyclotron resonance of electrons in silicon at temperatures up to 200 KProceedings of the Physical Society, 1966
- Measurement of the hall effect and conductivity of super-pure siliconJournal of Physics and Chemistry of Solids, 1959
- Fine Structure in the Absorption-Edge Spectrum of SiPhysical Review B, 1958
- The Electrical Conductivity and Hall Effect of SiliconProceedings of the Physical Society, 1958
- Statistics and Galvanomagnetic Effects in Germanium and Silicon with Warped Energy SurfacesPhysical Review B, 1955
- Cyclotron Resonance of Electrons and Holes in Silicon and Germanium CrystalsPhysical Review B, 1955
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954
- Temperature Dependence of the Energy Gap in SemiconductorsPhysical Review B, 1951
- Deformation Potentials and Mobilities in Non-Polar CrystalsPhysical Review B, 1950