SEM observation and contrast mechanism of stacking faults in an epitaxial silicon layer
- 1 September 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (9), 3732-3737
- https://doi.org/10.1063/1.1663852
Abstract
The stacking‐fault tetrahedron in an epitaxial Si layer was observed in the electron‐beam‐induced current mode using the scanning electron microscope. The contrast mechanism involved in the stair‐rod partial dislocations of the stacking‐fault tetrahedron was analyzed on the basis of a simplified model. The calculation seems to fit the experiment since good agreement was obtained between the observed and calculated results.Keywords
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