P+IN+ silicon diodes at high forward current densities
- 1 March 1965
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 8 (3), 275-284
- https://doi.org/10.1016/0038-1101(65)90143-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Electron-Hole Scattering at High Injection-Levels in GermaniumNature, 1962
- Das Verhalten von p-n-Gleichrichtern bei hohen DurchlaßbelastungenZeitschrift für Naturforschung A, 1956
- Durchlaß- und Sperreigenschaften eines p-i-Metall-GleichrichtersZeitschrift für Naturforschung A, 1956
- The Forward Characteristic of the Pin DiodeBell System Technical Journal, 1956
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952