SPONTANEOUS AND STIMULATED CARRIER LIFETIME AND THE SPECTRAL OUTPUT OF CdSe (77°K)
- 1 July 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (1), 42-45
- https://doi.org/10.1063/1.1653246
Abstract
Carrier lifetimes in thin (1–2μm) CdSe (77°K) photo‐excited platelet lasers measured by a mode‐locked laser excitation and phase‐shift technique are found to vary from τ=1.5×10−8 sec for spontaneous recombination to τ=3.3×10−10 sec for high‐level stimulated recombination. High‐level photopumping (n>1018 cm−3) causes platelet laser oscillations to shift to longer wavelengths. This shift, which is observed to be as large as 20 meV, is attributed to many‐particle interactions.Keywords
This publication has 11 references indexed in Scilit:
- THIN SEMICONDUCTOR LASER TO THIN PLATELET OPTICAL COUPLERApplied Physics Letters, 1970
- Threshold Requirements and Carrier Interaction Effects in GaAs Platelet Lasers (77°K)Journal of Applied Physics, 1970
- Effects of excitation intensity on the photoluminescence near the bandgap of n-InPSolid State Communications, 1969
- Optically Pumped Thin-Platelet Semiconductor LasersJournal of Applied Physics, 1968
- MANY-BODY WAVELENGTH SHIFT IN A SEMICONDUCTOR LASERApplied Physics Letters, 1968
- Evidence for Indirect Annihilation of Free Excitons in II-VI Semiconductor LasersJournal of Applied Physics, 1967
- INTERFEROMETRIC PHASE SHIFT TECHNIQUE FOR MEASURING SHORT FLUORESCENT LIFETIMESApplied Physics Letters, 1964
- Exciton Structure in Photoconductivity of CdS, CdSe, and CdS: Se Single CrystalsPhysical Review B, 1963
- A Criterion for Exciton Binding in Dense Electron—Hole Systems—Application to Line Narrowing Observed in GaAsJournal of Applied Physics, 1963
- Exciton Structure and Zeeman Effects in Cadmium SelenidePhysical Review B, 1962