Transient optical alignment and relaxation of excitons in GaAsAlGaAs quantum wells
- 31 December 1989
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 6 (3), 271-282
- https://doi.org/10.1016/0749-6036(89)90169-9
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Doubly resonant LO-phonon Raman scattering observed with GaAs-As quantum wellsPhysical Review B, 1987
- Optical dephasing of homogeneously broadened two-dimensional exciton transitions in GaAs quantum wellsPhysical Review B, 1986
- Single monolayer well size fluctuations in the luminescence of GaAs-GaAlAs superlatticesSuperlattices and Microstructures, 1985
- Excitons in GaAs quantum wellsJournal of Luminescence, 1985
- Localized and delocalized two-dimensional excitons in GaAs-AlGaAs multiple-quantum-well structuresPhysical Review B, 1984
- Low-temperature exciton trapping on interface defects in semiconductor quantum wellsPhysical Review B, 1984
- Localized Excitons in CdS1−xSex Solid SolutionsPhysica Status Solidi (b), 1982
- Resonant Rayleigh Scattering from an Inhomogeneously Broadened Transition: A New Probe of the Homogeneous LinewidthPhysical Review Letters, 1982
- Fluorescence line narrowing, localized exciton states, and spectral diffusion in the mixed semiconductorPhysical Review B, 1982
- Evidence for Exciton Localization by Alloy Fluctuations in Indirect-GapPhysical Review Letters, 1980