Two-Terminal Asymmetrical and Symmetrical Silicon Negative Resistance Switches
- 1 November 1959
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 30 (11), 1819-1824
- https://doi.org/10.1063/1.1735062
Abstract
By making use of an emitter region shorted by a metallic contact to an adjacent base region, a new form of p-n-p-n switch is obtained. Several new structures are described, including a symmetrical (or ac) switch. Typical experimental results on switches which breakdown in the range from 25 to 40 v are presented.Keywords
This publication has 5 references indexed in Scilit:
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- p-n-p-n Switching DiodesJournal of Electronics and Control, 1957
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