Recent Results in the Crystal Growth of GaN at High N2 Pressure
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Internet Journal of Nitride Semiconductor Research
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Structural characterization of bulk GaN crystals grown under high hydrostatic pressureJournal of Electronic Materials, 1996
- Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxyMRS Internet Journal of Nitride Semiconductor Research, 1996
- Surface morphology of as grown and annealed bulk GaN crystalsMRS Internet Journal of Nitride Semiconductor Research, 1996
- Investigation of longitudinal-optical phonon-plasmon coupled modes in highly conducting bulk GaNApplied Physics Letters, 1995
- Towards the Identification of the Dominant Donor in GaNPhysical Review Letters, 1995
- Native defects in gallium nitridePhysical Review B, 1995
- X-ray examination of GaN single crystals grown at high hydrostatic pressureJournal of Crystal Growth, 1993
- High pressure thermodynamics of GaNJournal of Crystal Growth, 1984
- Equilibrium pressure of N2 over GaN and high pressure solution growth of GaNJournal of Crystal Growth, 1984
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. III. Pressure-Temperature Phase Diagrams, Heats of Mixing, and Distribution CoefficientsPhysical Review B, 1973