Projecting the minimum acceptable oxide thickness for time-dependent dielectric breakdown
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. edl 8, 710-713
- https://doi.org/10.1109/iedm.1988.32911
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Modeling and characterization of gate oxide reliabilityIEEE Transactions on Electron Devices, 1988
- Acceleration Factors for Thin Gate Oxide Stressing8th Reliability Physics Symposium, 1985
- Reliability in MOS integrated circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984