Electrical and physico-chemical characterizations of the SiO2SiC interface
- 30 June 1995
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 28 (1-4), 193-196
- https://doi.org/10.1016/0167-9317(95)00041-6
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Surface potential fluctuations in metal–oxide–semiconductor capacitors fabricated on different silicon carbide polytypesApplied Physics Letters, 1994
- Low-frequency, high-temperature conductance and capacitance measurements on metal-oxide-silicon carbide capacitorsJournal of Applied Physics, 1994