Optimization and Characterization of InAs/(AlGa)Sb Heterojunction Field-Effect Transistors
- 1 December 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (12A), L2445
- https://doi.org/10.1143/jjap.29.l2445
Abstract
We report the structural optimization and characterization of (AlGa)Sb/InAs quantum well heterojunction field-effect transistors based on molecular beam epitaxy (MBE). A 1.7- µm-gate-length InAs-channel FET with optimized heterostructure showed a transconductance of more than 460 mS/mm (V ds=0.5v) at room temperature. Higher transconductance and drain current increase in the higher lateral electric field region (V ds>0.8v) corresponds to the increased carrier concentration measured by the pulsed high-field Hall-effect method on ungated samples.Keywords
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