Physical meaning of electron capture kinetics on D X centers
- 7 November 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (19), 1841-1843
- https://doi.org/10.1063/1.100371
Abstract
The capture kinetics of electrons on DX centers are interpreted in terms of a simple model taking only into account the fact that the concentrations of the DX centers and of the doping impurities are equal. It is shown that there is no need to introduce an alloying effect in order to explain the capture as well as the emission kinetics, in agreement with the nonobservation of this effect in optical transitions. This is understood if the DX center is itself the donor impurity.Keywords
This publication has 9 references indexed in Scilit:
- Physical origin of the D X centerApplied Physics Letters, 1988
- Direct evidence of the D X center link to the L-conduction-band minimum in GaAlAsApplied Physics Letters, 1988
- The capture barrier of the D X center in Si-doped AlxGa1−xAsJournal of Applied Physics, 1987
- Photoionization cross section of theDXcenter in Si-dopedAsPhysical Review B, 1987
- Origin of the nonexponential thermal emission kinetics of D X centers in GaAlAsApplied Physics Letters, 1986
- Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic PressureJapanese Journal of Applied Physics, 1985
- Transient capacitance spectroscopy in heavily compensated semiconductorsSolid-State Electronics, 1985
- Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy SystemJapanese Journal of Applied Physics, 1985
- Trapping characteristics and a donor-complex () model for the persistent-photoconductivity trapping center in Te-dopedPhysical Review B, 1979