Laser-induced surface damage of infrared nonlinear materials
- 1 December 1976
- journal article
- Published by Optica Publishing Group in Applied Optics
- Vol. 15 (12), 3062-3065
- https://doi.org/10.1364/ao.15.003062
Abstract
The thresholds for surface damage due to pulsed laser irradiation at 10.6 μm have been measured for CdGeAs2, AgGaSe2, AgGaS2, and Tl3AsSe3. In each case the threshold for pit formation is significantly lower than the threshold for visible plasma formation.This publication has 12 references indexed in Scilit:
- Pulsed infrared difference frequency generation in CdGeAs2Optics Communications, 1975
- Efficient doubling and CW difference frequency mixing in the infrared using the chalcopyrite CdGeAs2Optics Communications, 1974
- The nonlinear optical coefficient, phasematching, and optical damage in the chalcopyrite AgGaSe2Optics Communications, 1973
- Linear and nonlinear optical properties of some ternary selenidesIEEE Journal of Quantum Electronics, 1972
- Optical Properties of a New Nonlinear Optical Material: Tl_3AsSe_3Applied Optics, 1972
- Linear and nonlinear optical properties of ternary AIIBIVC2Vchalcopyrite semiconductorsIEEE Journal of Quantum Electronics, 1972
- Q-switched laser damage of infrared nonlinear materialsIEEE Journal of Quantum Electronics, 1972
- Linear and nonlinear optical properties of AgGaS2, CuGaS2, and CuInS2, and theory of the wedge technique for the measurement of nonlinear coefficientsIEEE Journal of Quantum Electronics, 1971
- CdGeAs2—A New Nonlinear Crystal Phasematchable at 10.6 μmApplied Physics Letters, 1971
- Silver thiogallate, a new material with potential for infrared devicesOptics Communications, 1971