Characterization of µc-Si:H Prepared by Photo-Chemical Vapor Deposition
- 1 August 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (8A), L624
- https://doi.org/10.1143/jjap.25.l624
Abstract
Microcrystalline silicon deposited by photo-CVD is characterized to reveal dependence of crystallinity on the film preparation conditions. The volume fraction of microcrystalline (X c) depends strongly on the dilution ratio of silane gas by hydrogen gas and substrate temperature (T s) of deposition, while the grain size (δ) of the microcrystalline is kept conslant irrespective of deposition condition. Preferred orientation changes from (110) to (111) with increasing X c.Keywords
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