Formation and photoluminescence of quantum wire structures on vicinal (110) GaAs substrates by MBE
- 1 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4), 1041-1044
- https://doi.org/10.1016/0022-0248(93)90787-w
Abstract
No abstract availableFunding Information
- Mitsubishi Foundation
- Murata Science Foundation
- Ministry of Education, Culture, Sports, Science and Technology
- Osaka University
- Institut des Systèmes Intelligents et de Robotique, Université Pierre et Marie Curie
This publication has 4 references indexed in Scilit:
- Step structures during MBE growth of GaAs and AlGaAs films on vicinal GaAs(110) surfaces inclined toward (111)BSurface Science, 1992
- Theory of luminescence polarization anisotropy in quantum wiresPhysical Review B, 1992
- MBE growth of AlGaAs/GaAs superlattices on GaAs (110) substratesSuperlattices and Microstructures, 1990
- Nitrogen trap in the semiconductor alloys GaAs1−χxPχx and AlχxGa1−χxAsJournal of Luminescence, 1979