Structurally induced optical transitions in Ge-Si superlattices
- 16 February 1987
- journal article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 58 (7), 729-732
- https://doi.org/10.1103/physrevlett.58.729
Abstract
Using electroreflectance spectroscopy, we have observed new optical transitions near 0.76, 1.25, and 2.31 eV in an ordered strained-layer Ge-Si superlattice. The possible origins of these transitions are discussed in terms of modification of the electronic band structure by the sample structure.Keywords
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