A simple method to determine channel widths for conventional and LDD MOSFET's
- 1 November 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 5 (11), 485-486
- https://doi.org/10.1109/edl.1984.25997
Abstract
A new method to determine the channel widths and in situ gate-oxide thicknesses of conventional and LDD MOSFET's is described. The method is based on the linear relationship between the intrinsic gate capacitance and effective channel width. Measurements from two gate biases on devices of different channel widths are sufficient to obtain a full characterization. Channel widths and gate-oxide thicknesses determined by this method are given for both types of devices. This method applies to large-size as well as small-size, test devices.Keywords
This publication has 5 references indexed in Scilit:
- A simple method to determine channel widths for conventional and LDD MOSFET'sIEEE Electron Device Letters, 1984
- A new method to electrically determine effective MOSFET channel widthIEEE Transactions on Electron Devices, 1982
- A new method to determine MOSFET channel lengthIEEE Electron Device Letters, 1980
- Interaction of IGFET field design with narrow channel device operationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980
- A New Method to Determine Effective MOSFET Channel LengthJapanese Journal of Applied Physics, 1979