Preparation and effects of irradiation-induced disorder in Pbthin films
- 1 January 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 27 (1), 212-223
- https://doi.org/10.1103/physrevb.27.212
Abstract
We report the first low-temperature-irradiation experiment of thin films of the Chevrel-phase superconductor Pb with fast ions (20-MeV sulfur). The films were prepared by dc magnetron sputtering and had superconducting critical temperatures up to 12.85 K (midpoint) with onsets of superconductivity up to 14.7 K. As a function of fluence, , the initial slope of the upper critical field , the low-temperature resistivity , and its temperature dependence have been measured. The and data indicate a defect-induced reduction of the electronic density of states at the Fermi level . This appears to be responsible for the strong decrease of which drops below 1.2 K at the comparatively very low fluence of . The decrease is accompanied by a change in the behavior of from metallic with a residual resistance ratio of about two to less than one at a fluence of only 3.9× where is still 6.32 K. The resistance ratio decreases further with irradiation and is less than 0.5 at 6.5× . We estimate the obtained defect concentrations and propose a simple model which could explain the observed experimental results.
Keywords
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