Abstract
A potassium lithium niobate crystal was used to double the resonantly enhanced emission of an 820 nm GaAlAs, single-mode diode laser. With a passive resonator enhancement factor of 73 and 11.5 mW of incident near-infrared power, 0.36 mW of second harmonic were produced in quasi-cw operation. The optical quality of the crystal is described and compared with that of KNbO3.