Resonantly enhanced, frequency doubling of an 820 nm GaAlAs diode laser in a potassium lithium niobate crystal
- 4 January 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (1), 19-21
- https://doi.org/10.1063/1.108831
Abstract
A potassium lithium niobate crystal was used to double the resonantly enhanced emission of an 820 nm GaAlAs, single-mode diode laser. With a passive resonator enhancement factor of 73 and 11.5 mW of incident near-infrared power, 0.36 mW of second harmonic were produced in quasi-cw operation. The optical quality of the crystal is described and compared with that of KNbO3.Keywords
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