Low-noise microwave HIFET fabricated using photolithography and MOCVD
- 1 January 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (9), 487-488
- https://doi.org/10.1049/el:19860331
Abstract
Low-noise HIFETs with AlGaAs/GaAs heterostructures have been developed using MOCVD and optical photolithography. HIFETs with less than 0.5 μm-long and 200 μm wide gates show a noise figure of 0.87 dB with an associated gain of 12.5 dB at 12 GHz, and a DC tranconductance of 280 mS/mmKeywords
This publication has 1 reference indexed in Scilit:
- Broadband HEMT and GaAs FET Amplifiers for 18 - 26.5 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005