Photoluminescence study of perturbed growth of InP on quaternary layers in InGaAsP-InP double heterostructures
- 15 July 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (2), 228-231
- https://doi.org/10.1063/1.91834
Abstract
Photoluminescence (PL) spectra of InGaAsP‐InP laser double heterostructures show evidence for perturbed growth in the top InP confinement layers. The PL spectra of these layers are found to be a bnormally wide and exhibit two emission features hitherto unobserved in single InP epilayers. This perturbed growth of InP layers is attributed to a partial dissolution of the quaternary material by the In‐P liquid where the dissolution process is favored by the compositional fluctuation in the growth plane of the InGaAsP active layers.Keywords
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