Work Function of Tantalum Carbide and the Effects of Adsorption and Sputtering of Cesium
- 1 June 1971
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (7), 2682-2688
- https://doi.org/10.1063/1.1660608
Abstract
The work function of ``unactivated'' tantalum carbide is 4.22±0.06 eV. The decrease of work function produced by the so‐called ``activation'' process is attributed to a loss of carbon. The deposition of low‐energy cesium ions (2–5 eV) reduced the work function to a minimum value of 1.40±0.02 eV. Cesium ions with energies of 7–28 eV sputter previously adsorbed cesium in the form of neutral atoms. The energy required to produce this sputtering decreases with increasing cesium coverage.Keywords
This publication has 15 references indexed in Scilit:
- Rotatable Multiple Sample Mount for Bakeable Vacuum SystemsReview of Scientific Instruments, 1969
- Electron and Ion Emission from Surfaces Originally of TaB2, ZrC, Mo2C, MoSi2, TaSi2, and WSi2 in Cesium VaporJournal of Applied Physics, 1968
- Effect of Cesium Vapor on the Emission Characteristics of Uranium Carbide at Elevated PressuresJournal of Applied Physics, 1965
- High Vacuum Deposition of CesiumReview of Scientific Instruments, 1963
- Effect of Composition on the Superconducting Transition Temperature of Tantalum Carbide and Niobium CarbidePhysical Review B, 1962
- Preparation and Some Properties of Tantalum CarbideJournal of Applied Physics, 1962
- The Heat of Sublimation of Carbon.The Journal of Physical Chemistry, 1955
- Certain Refractory Compounds as Thermionic EmittersJournal of Applied Physics, 1951
- Anisotropy of the Electronic Work Function of MetalsPhysical Review B, 1941
- The Evaporation of Atoms, Ions and Electrons from Caesium Films on TungstenPhysical Review B, 1933