Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry
- 9 July 2007
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 91 (2), 023510
- https://doi.org/10.1063/1.2756139
Abstract
The authors report on the design and fabrication of high-efficiency GaN-based light emitting diodes(LEDs) with vertical-injection geometry. Based on the analyses of LED test patterns fabricated with various n -electrode dimensions, a design rule for vertical LEDs is proposed. It is found that the suppression of the vertical current under n electrodes and the efficient injection of the spreading current across the n layers are essential to fabricate high-efficiency LEDs. Introduction of the current blocking layer along with well-designed branched n electrodes results in a large enhancement of power efficiency by a factor of 1.9, compared with that of reference LEDs.Keywords
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