Characterization of ultra-high-speed pseudomorphic AlGaAs/InGaAs (on GaAs) MODFETs
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (10), 2243-2248
- https://doi.org/10.1109/16.40906
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Carrier Deconfinement Limited Velocity In Pseudomorphic AlGaAsiin GaAs Modulation-doped Field Effect Transistors (MODFET's)Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETsIEEE Transactions on Electron Devices, 1989
- Bias dependence of the MODFET intrinsic model elements values at microwave frequenciesIEEE Transactions on Electron Devices, 1989
- 0.2- mu m gate-length atomic-planar doped pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.25/Ga/sub 0.75/As MODFETs with f/sub T/ over 120 GHzIEEE Electron Device Letters, 1988
- The role of inefficient charge modulations in limiting the current-gain cutoff frequency of the MODFETIEEE Transactions on Electron Devices, 1988
- Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETsIEEE Transactions on Electron Devices, 1988
- Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistorsIEEE Transactions on Electron Devices, 1986