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Si incorporation in Al
x
Ga1−
x
As grown by molecular beam epitaxy
Home
Publications
Si incorporation in Al
x
Ga1−
x
As grown by molecular beam epitaxy
Si incorporation in Al
x
Ga1−
x
As grown by molecular beam epitaxy
TD
T. J. Drummond
T. J. Drummond
WL
W. G. Lyons
W. G. Lyons
RF
R. Fischer
R. Fischer
RT
R. E. Thorne
R. E. Thorne
HM
H. Morkoç
H. Morkoç
CH
C. G. Hopkins
C. G. Hopkins
CE
C. A. Evans
C. A. Evans
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1 November 1982
journal article
Published by
American Vacuum Society
in
Journal of Vacuum Science and Technology
Vol. 21
(4)
,
957-960
https://doi.org/10.1116/1.571873
Abstract
No abstract available
Cited by 22 articles