Effect of Top Dielectric Medium on Gate Capacitance of Graphene Field Effect Transistors: Implications in Mobility Measurements and Sensor Applications
- 19 November 2010
- journal article
- research article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 10 (12), 5060-5064
- https://doi.org/10.1021/nl103306a
Abstract
No abstract availableKeywords
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