Epitaxial Growth and Characterization of Pyrolytic-Grown GaAs[sub 1−x]P[sub x] for Electroluminescent Diodes

Abstract

Epitaxial layers of on substrates were prepared using trimethylgallium, arsine, and phosphine. The growth was primarily mass transport limited and the phosphorus content in the layers increased linearly with the phosphine content in the vapor and the substrate temperature. Growth pyramids appeared at high phosphine content in the vapor and were brighter than flat regions in the cathodoluminescent image. A diode, fabricated by diffusing zinc into layers, showed brightness of 43 ft‐L at 8 A/cm² with an external quantum efficiency of about 0.01%. The external efficiency has been found to depend strongly on the generation‐recombination current and the deep level impurity concentration in the depletion layer.