Spin-Orbit Splitting at thePoint inAlloys
- 17 June 1974
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 32 (24), 1366-1370
- https://doi.org/10.1103/physrevlett.32.1366
Abstract
Electroreflectance spectra were measured at room temperature to determine the energies of the lowest gap, , and its spin-orbit-splitting gap, , in alloys as a function of composition . The variation with of the spin-orbit splitting at the point, , was found to show convex behavior, confirming our preliminary results deduced from reflectivity measurements. The deviation from linearity of is 0.146 eV at . The bowing parameters of the and gaps were determined to be 1.266 ± 0.023 and 0.681 ± 0.040 eV, respectively.
Keywords
This publication has 23 references indexed in Scilit:
- Energy-gap variations in semiconductor alloysJournal of Physics C: Solid State Physics, 1974
- Spin-orbit splitting in semiconductor alloysJournal of Physics C: Solid State Physics, 1974
- Effect of Disorder on the Conduction-Band Effective Mass, Valence-Band Spin-Orbit Splitting, and the Direct Band Gap in III-V AlloysPhysical Review B, 1973
- Crystal growth of ZnxCd1−xTe solid solutions and their optical properties at the photon energies of the lowest band-gap regionJournal of Applied Physics, 1973
- Spin-Orbit Splitting in Compositionally Disordered SemiconductorsPhysical Review Letters, 1972
- Reflectivity spectra of ZnxCd1−xTe single crystalsSolid State Communications, 1972
- The effect of atomic displacement on energy gap bowing in zincblende semiconductor alloysJournal of Physics C: Solid State Physics, 1972
- The composition dependence of energy bands in mixed semi- conductor systems with zincblende structuresJournal of Physics C: Solid State Physics, 1971
- Electronic Structures of Semiconductor AlloysPhysical Review B, 1970
- Pseudopotential calculations of the band structure of GaAs, InAs and (GaIn) as alloysSolid State Communications, 1969