Magnetoresistance in Germanium in the Impurity Conduction Range

Abstract

In germanium samples with impurity concentrations between 5×${10}^{16}$ and 3×${10}^{17}$ per ${\mathrm{cm}}^3$, when impurity conduction sets in, there is a temperature range in which the resistivity is characterized by an activation energy ${\epsilon }_2$. The magnetoresistance in this region has been studied. It is found that the effect of a magnetic field is to change the activation energy ${\epsilon }_2$ to ${\epsilon }_2+\alpha H^2$. The value of $\alpha$ depends on the nature and concentration of the impurity. The experimental results for Sb-, As-, and Ga-doped samples are presented.