Fast transient capacitance measurements for implanted deep levels in silicon
- 1 September 1975
- journal article
- Published by Springer Nature in Applied Physics B Laser and Optics
- Vol. 8 (1), 35-42
- https://doi.org/10.1007/bf00883667
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance techniqueSolid-State Electronics, 1974
- Properties of the gold acceptor state in siliconPhysica Status Solidi (a), 1974
- Determination of the capture ratecn of the gold acceptor level from single injection n+–i–n+ silicon SCLC diodesPhysica Status Solidi (a), 1974
- Deep trap levels of ion-implanted germanium in silicon measured by Schottky contact techniquesApplied Physics Letters, 1973
- Properties of a single-level surface state induced by Be implantation into Si–SiO2 interfacesJournal of Applied Physics, 1973
- Determination of deep energy levels in Si by MOS techniquesApplied Physics Letters, 1972
- Properties of 1 MeV electron-irradiated defect centers in p-type siliconPhysica Status Solidi (a), 1972
- Thermal ionization rates and energies of electrons and holes at silver centers in siliconPhysica Status Solidi (a), 1971
- Thermal emission and capture of electrons at sulfur centers in siliconSolid-State Electronics, 1971
- Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experimentsSolid-State Electronics, 1970