High-Energy Light Emission from Junctions in GaAsxP1−x Diodes
- 1 January 1964
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (1), 105-107
- https://doi.org/10.1063/1.1713012
Abstract
Spontaneous and stimulated emission from junctions in diodes made of silicon‐doped, melt‐grown GaAsxP1−x alloys have been studied. Variations of the emission spectra as a function of current and of composition ranging up to 40 mole % GaP were examined both at room temperature and 77°K.Keywords
This publication has 3 references indexed in Scilit:
- COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONSApplied Physics Letters, 1962
- Light emission from forward biased p-n junctions in gallium phosphideSolid-State Electronics, 1962
- Notizen: Mischkristallbildung bei AIII Bv-VerbindungenZeitschrift für Naturforschung A, 1955