A-Si:H layers have been deposited by chemical vapour deposition (CVD) at 350°C using Si3H8 as the source gas. Inverted staggered gate thin-film transistors (TFTs) were fabricated with plasma-CVD-grown SiNx as the gate insulator. Electron field-effect mobilities of 0.45cm2/Vs were obtained, and the on/off ratio in the drain current was 106.