Metalorganic InP and Inx Ga1-x, Asy P1-y, on InP epitaxy at atmospheric pressure
- 1 May 1984
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 13 (3), 603-620
- https://doi.org/10.1007/bf02656656
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- The growth and characterization of uniform Ga1-xInxAs (X ≤.25) by Organometallic VPEJournal of Electronic Materials, 1981
- A new approach to MOCVD of indium phosphide and gallium-indium arsenideJournal of Crystal Growth, 1981