Recoil contribution to ion-implantation energy-deposition distributions
- 1 August 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (8), 3385-3394
- https://doi.org/10.1063/1.322243
Abstract
A previous method for directly calculating the spatial distribution of energy deposition into damage or ionization for ions implanted into solid targets is extended to account for energy transport by recoiling target atoms. The new calculations extend the applicability of the method to lower incident ion energies. In addition, an intermediate step in the calculations provides information on the spectrum of target recoil atoms. Good agreement is obtained between experiment and theory using the improved procedure. Calculated damage energy distributions are presented for 10‐keV–1‐MeV B, P, As, and Sb ions incident on silicon.Keywords
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