Monolithic GaAlAs/GaAs infrared-to-visible wavelength converter with optical power amplification

1 April 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 28 (4), 404-407
https://doi.org/10.1109/t-ed.1981.20354

Abstract

A monolithic wavelength converter has been constructed in the GaAlAs alloy system which comprises a wide gap emitter phototransistor and a double heterojunction (DH) light emitting diode (LED) in a bifacial configuration. The liquid phase epitaxy (LPE)-grown structure is capable of efficiently converting IR light with λ < 870 nm into the red spectral range in conjunction with optical power amplification.

Keywords

LIGHT EMITTING DIODE
QUANTUM EFFICIENCY
GALLIUM ARSENIDE
HETEROJUNCTIONS
ELECTRONS
STIMULATED EMISSION
INFRARED RADIATION
INFRARED
POWER AMPLIFIER
LIGHT EMITTING DIODES
ENERGY CONVERSION

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