Solid-phase formation of transistor emitters at low temperature

1 January 1972

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 60 (8), 1018
https://doi.org/10.1109/proc.1972.8846

Abstract

The solid-phase reaction of evaporated Al on n-type Ge at 310°C was used to form the emitter of a transistor. Hole injection efficiencies as large as 95 percent were observed.

Keywords

TEMPERATURE
ARTIFICIAL INTELLIGENCE
HEAT TREATMENT
ETCHING
HAFNIUM
GERMANIUM ALLOYS
VOLTAGE
SOLID STATE CIRCUITS
FABRICATION
SURFACE FINISHING

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