Rankings
Publications
Search Publications
Cited-By Search
Sources
Publishers
Scholars
Scholars
Top Cited Scholars
Organizations
About
Login
Register
Home
Publications
Oxygen-Related Defect Centers in 4H Silicon Carbide
Home
Publications
Oxygen-Related Defect Centers in 4H Silicon Carbide
Oxygen-Related Defect Centers in 4H Silicon Carbide
TD
T. Dalibor
T. Dalibor
GP
Gerhard Pensl
Gerhard Pensl
TY
T. Yamamoto
T. Yamamoto
TK
Tsunenobu Kimoto
Tsunenobu Kimoto
HM
Hiroyuki Matsunami
Hiroyuki Matsunami
SS
S.G. Sridhara
S.G. Sridhara
DN
D.G. Nizhner
D.G. Nizhner
RD
Robert P. Devaty
Robert P. Devaty
WC
Wolfgang J. Choyke
Wolfgang J. Choyke
Publisher Website
Google Scholar
Add to Library
Cite
Download
Share
Download
Download
Download PDF
Download
1 February 1998
journal article
Published by
Trans Tech Publications, Ltd.
in
Materials Science Forum
Vol. 264-268
,
553-556
https://doi.org/10.4028/www.scientific.net/msf.264-268.553
Abstract
No abstract available
Keywords
ADMITTANCE SPECTROSCOPY
DEEP OXYGEN-RELATED CENTERS
DEEP-LEVEL TRANSIENT SPECTROSCOPY
LOW TEMPERATURE PHOTOLUMINESCENCE
OXYGEN IMPLANTATION
SHALLOW OXYGEN-RELATED CENTERS
Cited by 16 articles