Quantized resistance in in-plane gated narrow constriction fabricated by wet etching
- 31 December 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (27), 2916-2918
- https://doi.org/10.1063/1.103729
Abstract
A narrow in-plane gated constriction is defined by technique employing electron beam lithography and wet chemical etching. Two-dimensional electron gas beside the narrow channel is used to control the number of occupied subbands in the constriction. A ballistic transport through the point contact is manifested by the observation of successive resistance steps when the subbands are depopulated.Keywords
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