As more advances are made in the performance of GaN-based devices, a trend toward the use of large scale MOCVD reactors for epitaxial growth of GaN-based device structures is clear. In this paper we describe the use of Emcore's SpectraBlueTM reactor for large-scale manufacturing of Blue and Green LEDs. The high throughput growth of GaN based LEDs is demonstrated without compromising LED uniformity or overall performance. In-situ control of key parameters critical to the production of high quality LEDs, such as buffer layer growth is now feasible using in-situ reflectance spectroscopy. Film properties as well as LED device performance are discussed.