Improved n-type organic transistors by introducing organic heterojunction buffer layer under source/drain electrodes

Abstract

N -type organic thin-film transistors (OTFTs) employing hexadecafluorophthalocyaninatocopper ( F 16 Cu Pc ) as active layer and p -type copper phthalocyanine (CuPc) as buffer layer are demonstrated. The highest field-effect mobility is 7.6 × 10 − 2 cm 2 ∕ V s . The improved performance was attributed to the decrease of contact resistance due to the introduction of highly conductive F 16 Cu Pc ∕ Cu Pc organic heterojunction. Therefore, current method provides an effective path to improve the performance of OTFTs.