Effects of higher sub-band occupation in (100) Si inversion layers
- 15 March 1976
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 13 (6), 2519-2523
- https://doi.org/10.1103/physrevb.13.2519
Abstract
At low temperatures and for moderate surface charge densities, electrons in inversion layers on (100) -type Si are two-dimensional in character; i.e., they occupy only one electric quantum level, or sub-band. For electron densities greater than about 6 × per , depending upon substrate doping, we have observed deviations from two-dimensional behavior in oscillatory magnetoconductance (Shubnikov-de Haas) measurements, which are interpreted as evidence of the onset of occupation of a higher sub-band. The effects of such occupation of higher sub-bands have been calculated for the four different resistivities used in the experiments. The observed change in effective density of states [(10-20)%] and its dependence upon substrate resistivity are in good agreement with theory. The experimental values for the threshold charge densities for higher sub-band occupation are higher than the theoretical values by a factor of about 1.5.
Keywords
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