Both n- and p-type Ge films have been grown on InP substrates by vacuum-vapor-deposition. Contact resistivity for n-Ge films on 1.3×1016 cm−3 n-InP was measured to be 10−5 Ω cm2. On the other hand, p-Ge films on lightly doped p-InP resulted in poor ohmic behavior. For contacts to lightly doped p-InP, the AuZn system was used, resulting in a contact resistance of 5×10−3 Ω cm2 for 1.2×1016 cm−3 p-InP. The sintering behavior of this AuZn contact to InP and the doping characteristics of deposited Ge films have been correlated with Auger measurements of similarly heat-treated InP surfaces.