Quantum lifetime measurements of the two-dimensional electron gas at the inverted AlGaAs/GaAs interface
- 31 December 1988
- journal article
- Published by Elsevier BV in Surface Science
- Vol. 196 (1-3), 323-327
- https://doi.org/10.1016/0039-6028(88)90702-9
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- AlAs/n-GaAs superlattice and its application to high-quality two- dimensional electron gas systemsJournal of Applied Physics, 1986
- Single-particle relaxation time versus scattering time in an impure electron gasPhysical Review B, 1985
- Quantum and classical mobility determination of the dominant scattering mechanism in the two-dimensional electron gas of an AlGaAs/GaAs heterojunctionPhysical Review B, 1985
- Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBEJapanese Journal of Applied Physics, 1984
- Parabolic Magnetoresistance from the Interaction Effect in a Two-Dimensional Electron GasPhysical Review Letters, 1983
- Use of a superlattice to enhance the interface properties between two bulk heterolayersApplied Physics Letters, 1983
- Moderate mobility enhancement in single period AlxGa1−x As/GaAs heterojunctions with GaAs on topJournal of Applied Physics, 1982
- Interfacial properties of (Al,Ga)As/GaAs structures: Effect of substrate temperature during growth by molecular beam epitaxyJournal of Applied Physics, 1982
- Theory of Quantum Transport in a Two-Dimensional Electron System under Magnetic Fields. IV. Oscillatory ConductivityJournal of the Physics Society Japan, 1974