Effect of structural reconstruction of Ge(111) and Ge(100) surfaces on Auger-type electron ejection by slow ions
- 30 April 1965
- journal article
- Published by Elsevier in Surface Science
- Vol. 3 (2), 175-188
- https://doi.org/10.1016/0039-6028(65)90042-7
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Interpretation of low energy electron diffraction data to predict surface atom arrangementsSurface Science, 1964
- Possible structures for clean, annealed surfaces of germanium and siliconSurface Science, 1964
- Comparison of the Photoelectric Properties of Cleaved, Heated, and Sputtered Silicon SurfacesJournal of Applied Physics, 1964
- Structural Properties of Cleaved Silicon and Germanium SurfacesJournal of Applied Physics, 1963
- Structures of Clean Surfaces of Germanium and Silicon. IJournal of Applied Physics, 1963
- LOW ENERGY ELECTRON DIFFRACTION FROM A CLEAVED GERMANIUM SURFACE*Annals of the New York Academy of Sciences, 1963
- Theory of Auger Neutralization of Ions at the Surface of a Diamond-Type SemiconductorPhysical Review B, 1961
- Surface Structures and Properties of Diamond-Structure SemiconductorsPhysical Review B, 1961
- Structure and Adsorption Characteristics of Clean Surfaces of Germanium and SiliconThe Journal of Chemical Physics, 1959
- Variation of contact potential with crystal face for germaniumJournal of Physics and Chemistry of Solids, 1957