The influence of ammonia on the growth rate in the vapour phase epitaxy of gallium phosphide
- 1 November 1980
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 50 (3), 701-706
- https://doi.org/10.1016/0022-0248(80)90016-0
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Growth and properties of VPE GaP for green LEDsJournal of Electronic Materials, 1975
- Mass spectrometric and thermodynamics studies of the CVD of some III–V compoundsJournal of Crystal Growth, 1972
- Critical reassessment of viscosities of 11 common gasesJournal of Chemical & Engineering Data, 1972
- Mass Spectrometric Studies of Vapor-Phase Crystal GrowthJournal of the Electrochemical Society, 1972
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965
- A Viscosity Equation for Gas MixturesThe Journal of Chemical Physics, 1950
- Diffusion Coefficients in Gaseous SystemsIndustrial & Engineering Chemistry, 1934