The effect of point defects on absorption of high energy electrons passing through crystals
- 1 October 1966
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 14 (131), 979-989
- https://doi.org/10.1080/14786436608244769
Abstract
The effect of substitutional and interstitial atoms on the absorption of high energy electrons is considered. Two mechanisms of absorption are discussed; viz. the contributions due to scattering by the additional scattering centres and due to displacements of the atoms surrounding the point defects. The absorption estimated on these two mechanisms is compared with the results of some experimental measurements on silicon doped with various impurities.Keywords
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