GaAs–Ga1−xAlxAs double-heterostructure distributed-feedback diode lasers
- 1 November 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (9), 487-488
- https://doi.org/10.1063/1.1655559
Abstract
We report laser oscillation at 80–100°K in electrically pumped GaAs–Ga1−xAlxAs double‐heterostructure distributed‐feedback diode lasers. The feedback for laser oscillation was provided by a corrugated interface between the active GaAs layer and the p‐Ga1−xAlxAs layer. The lowest threshold current density was 2.5 kA/cm2 in pulsed operation. The wavelength of laser emission was 8112 Å at 82°K with a half‐width of less than 0.3 Å. The temperature dependence of the laser wavelength was found to be smaller than that of the conventional Fabry‐Perot laser.Keywords
This publication has 8 references indexed in Scilit:
- Liquid phase epitaxy of GaAlAs on GaAs substrates with fine surface corrugationsApplied Physics Letters, 1974
- Analysis of the threshold of double heterojunction GaAs-GaAlAs lasers with a corrugated interfaceOptics Communications, 1974
- Optically pumped GaAs waveguide lasers with a fundamental 0.11 μ corrugation feedbackOptics Communications, 1973
- Laser oscillation in epitaxial GaAs waveguides with corrugation feedbackApplied Physics Letters, 1973
- Refractive index of n-type gallium arsenideJournal of Applied Physics, 1973
- Optically pumped GaAs surface laser with corrugation feedbackApplied Physics Letters, 1973
- Ion Beam Micromachining of Integrated Optics ComponentsApplied Optics, 1973
- Very-Low-Current Operation of Mesa-Stripe-Geometry Double-Heterostructure Injection LasersApplied Physics Letters, 1972