Short-channel MOSFETs in the punchthrough current mode
- 1 April 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 14 (2), 368-375
- https://doi.org/10.1109/jssc.1979.1051187
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- Characteristics of short channel MOSFETs in the punch-through current modePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1978
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- Fundamental performance limits of MOS integrated circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1975
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- Subthreshold design considerations for insulated gate field-effect transistorsIEEE Journal of Solid-State Circuits, 1974
- Punchthrough currents in short-channel m.o.s.t. devicesElectronics Letters, 1973
- Modulation of space-charge-limited current flow in insulated-gate field-effect tetrodesIEEE Transactions on Electron Devices, 1969
- The silicon insulated-gate field-effect transistorProceedings of the IEEE, 1963