Fundamental performance limits of MOS integrated circuits

1 January 1975

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. XVIII, 110-111
https://doi.org/10.1109/isscc.1975.1155365

Abstract

This paper will describe MOST characteristic equations which encompass both weak and strong inversion and, at the same time, both long and short channels.

Keywords

MOS INTEGRATED CIRCUITS
POISSON EQUATIONS
THRESHOLD VOLTAGE
ROUGH SURFACES
SURFACE ROUGHNESS
INSULATION
LAPLACE EQUATIONS
PROPAGATION DELAY
ENERGY CONSUMPTION
CHARGE CARRIER DENSITY

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