An observation by photoconductivity of strain splitting of shallow bulk donors located near to the surface in silicon mos devices
- 31 October 1976
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 20 (1), 77-80
- https://doi.org/10.1016/0038-1098(76)91703-8
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- The dynamics of conduction electrons in surface space charge layersPublished by Springer Nature ,2007
- A novel voltage tuneable infrared spectrometer-detectorIEEE Transactions on Electron Devices, 1975
- Far infrared photoconductivity from majority and minority impurities in high purity Si and GeSolid State Communications, 1974
- Piezoresistance in n-type silicon inversion layers at low temperaturesPhysica Status Solidi (a), 1973
- Infrared studies of the acceptor states in epitaxial films of GaAsJournal of Physics C: Solid State Physics, 1973
- Determination of the Deformation-Potential Constant of the Conduction Band of Silicon from the Piezospectroscopy of DonorsPhysical Review B, 1972
- Quadratic Zeeman Effect of Donor Lines in Silicon. II. Comparison with ExperimentCanadian Journal of Physics, 1972
- EFFECTS OF EXTERNAL AND INTERNAL ELECTRIC FIELDS ON THE BORON ACCEPTOR STATES IN SILICONCanadian Journal of Physics, 1967
- Internal Impurity Levels in Semiconductors: Experiments in-Type SiliconPhysical Review Letters, 1960
- ZEEMAN SPLITTING OF DONOR STATES IN GERMANIUMCanadian Journal of Physics, 1958